Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide
Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide
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使用四溴化碳在低压金属有机气相外延中生长的碳掺杂 GaAs
DOI：
10.1007/bf02676840
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发表时间：
1995
影响因子：
2.1
通讯作者：
M. Weyers
中科院分区：
文献类型：
--
作者：
E. Richter;P. Kurpas;D. Gutsche;M. Weyers
采用四溴化碳作为碳源，在低压金属有机物气相外延（MOVPE）中生长重p型掺杂GaAs。在550至670°C的温度下，在1至50的V/III比和0.01至0.03 Pa的四溴化碳分压下研究碳掺入的效率。在生长态层中获得了8 × 1017 ~ 5 × 1019 cm-3的空穴浓度。在450°C的氮气氛中退火后，发现最大空穴浓度为9 × 1019 cm − 3，迁移率为87 cm 2/Vs。在低于600°C的生长温度下，在层中检测到微量溴。光致发光映射显示了良好的掺杂均匀性。因此，发现CBr 4是MOVPE中合适的碳掺杂剂源。
Carbon tetrabromide was used as carbon source for heavily p-doped GaAs in low pressure metalorganic vapor phase epitaxy (MOVPE). The efficiency of carbon incorporation was investigated at temperatures between 550 and 670°C, at V/III ratios from 1 to 50 and carbon tetrabromide partial pressures from 0.01 to 0.03 Pa. Hole concentrations from 8 × 1017to 5 × 1019cm−3in as-grown layers were obtained. After annealing in nitrogen atmosphere at 450°C, a maximum hole concentration of 9 × 1019cm−3and a mobility of 87 cm2/Vs was found. At growth temperatures below 600°C, traces of bromine were detected in the layers. Photoluminescence mapping revealed an excellent doping homogeneity. Thus, CBr4is found to be a suitable carbon dopant source in MOVPE.