Direct Synthesis of Single-Walled Carbon Nanotubes on Silicon and Quartz-Based Systems
Direct Synthesis of Single-Walled Carbon Nanotubes on Silicon and Quartz-Based Systems
复制标题
在硅和石英基体系上直接合成单壁碳纳米管
DOI：
10.1143/jjap.43.1221
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发表时间：
2004
影响因子：
1.5
通讯作者：
S. Maruyama
中科院分区：
文献类型：
--
作者：
Y. Murakami;S. Chiashi;Y. Miyauchi;S. Maruyama
本文介绍了一种在硅和石英衬底上直接合成单壁碳纳米管的新技术。该技术采用液体基浸渍法，利用Mo/Co双金属醋酸溶液将极少量的催化剂金属贴装在基片表面。与传统的溅射和沉积方法相比，该方法的优点在于其简单，无成本和几何柔性。我们使用醇催化化学气相沉积（ACCVD）方法，即使在低至600°C的低温下也可以生产出相对高质量的单壁碳纳米管。这种低温工艺有助于防止催化金属在表面的团聚和催化金属与硅之间的化学反应，这有助于我们消除任何一种中间支撑材料。通过扫描电镜、透射电镜、拉曼散射和吸光度测量，对不同CVD条件下硅和石英衬底上合成的单壁碳纳米管进行了表征。通过对比研究，讨论了我们的实验程序和催化剂的选择对碳纳米管的合成起作用的根本原因。在本报告的最后，说明了该技术的一些可能的应用。
A newly developed technique of synthesizing single-walled carbon nanotubes (SWNTs) directly on the surface of Si and quartz substrates is introduced in this report. This technique adopted a liquid-based dip-coating method to mount a very small amount of catalyst metals on the surface of substrates using Mo/Co bimetallic acetate solution. The merits of this approach lie in its easy, costless, and geometry-flexible nature compared with conventional sputtering and deposition approaches. We used the alcohol catalytic chemical vapor deposition (ACCVD) method that can produce relatively high-quality SWNTs even at low temperatures down to 600°C. This low-temperature process contributes to the prevention of the agglomeration of catalytic metals on the surface and chemical reaction between catalytic metal and silicon, which helps us to eliminate any kind of intermediating support materials. Thereby synthesized SWNTs on Si and quartz substrates under various CVD conditions are characterized by means of SEM, TEM, Raman scattering, and optical absorbance measurements. The underlying reasons our experimental procedure and choice of catalyst worked for the synthesis of SWNTs are discussed through comparative studies. At the end of this report, some possible applications of this technique are stated.
影响因子：
3.3
作者：
A. Cassell;J. Raymakers;J. Kong;H. Dai
通讯作者：
A. Cassell;J. Raymakers;J. Kong;H. Dai
影响因子：
56.9
作者：
Rao, AM;Richter, E;Dresselhaus, MS
通讯作者：
Dresselhaus, MS