Effects of post-deposition vacuum annealing on film characteristics of p-type Cu2O and its impact on thin film transistor characteristics
Effects of post-deposition vacuum annealing on film characteristics of p-type Cu2O and its impact on thin film transistor characteristics
复制标题
DOI：
10.1063/1.4965848
复制
发表时间：
2016-10-24
影响因子：
4
通讯作者：
Flewitt, Andrew J.
中科院分区：
文献类型：
--
作者：
Han, Sanggil;Niang, Kham M.;Flewitt, Andrew J.
研究了氧化亚铜（Cu2O）薄膜在真空中无相变退火后作为p型薄膜晶体管（TFTs）沟道层的方法。这是基于真空退火对溅射p型Cu2O的影响以及基于晶体学、光学和电学特性的tft性能的系统研究。以前认为Cu2O薄膜的高温退火会导致相变。在这项工作中，观察到真空退火温度的升高导致薄膜结晶度的提高和基于x射线衍射图的带尾态的减少，以及Urbach尾的减少。这导致霍尔迁移率从0.14 cm(2)/V显著增加。(1)沉积膜的速率为28cm (2)/ v / s。随着退火温度的升高，本然载流子密度从1.8 x 10（16）显著降低到1.7 x 10(13) cm（-3）。研究发现，由于Cu2O活性层薄膜质量的改善，场效应迁移率和开关电流比的增强，以及关断电流的减小，TFT性能得到了显著提高。最后，使用700℃退火的Cu2O制备的底栅交错p型tft的场效应迁移率接近0.9 cm(2)/V。S和一个类似于3.4 × 10(2)的开/关电流比。AIP出版社出版。
Annealing of cuprous oxide (Cu2O) thin films in vacuum without phase conversion for subsequent inclusion as the channel layer in p-type thin film transistors (TFTs) has been demonstrated. This is based on a systematic study of vacuum annealing effects on the sputtered p-type Cu2O as well as the performance of TFTs on the basis of the crystallographic, optical, and electrical characteristics. It was previously believed that high-temperature annealing of Cu2O thin films would lead to phase conversion. In this work, it was observed that an increase in vacuum annealing temperature leads to an improvement in film crystallinity and a reduction in band tail states based on the X-ray diffraction patterns and a reduction in the Urbach tail, respectively. This gave rise to a considerable increase in the Hall mobility from 0.14 cm(2)/V.s of an as-deposited film to 28 cm(2)/V.s. It was also observed that intrinsic carrier density reduces significantly from 1.8 x 10(16) to 1.7 x 10(13) cm(-3) as annealing temperature increases. It was found that the TFT performance enhanced significantly, resulting from the improvement in the film quality of the Cu2O active layer: enhancement in the field-effect mobility and the on/off current ratio, and a reduction in the off-state current. Finally, the bottom-gate staggered p-type TFTs using Cu2O annealed at 700 degrees C showed a field-effect mobility of similar to 0.9 cm(2)/V.s and an on/off current ratio of similar to 3.4 x 10(2). Published by AIP Publishing.