Growth of highly resistive BiMnO3 films -: art. no. 101906
Growth of highly resistive BiMnO3 films -: art. no. 101906
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DOI：
10.1063/1.2039988
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发表时间：
2005-09-05
影响因子：
4
通讯作者：
Mathur, ND
中科院分区：
文献类型：
--
作者：
Eerenstein, W;Morrison, FD;Mathur, ND
BiMnO3 (010) 薄膜 (100 nm) 在 SrTiO3 (001) 和 0.2 at 上外延生长。使用脉冲激光沉积的 % Nb 掺杂 SrTiO3 (001) 基板。人们发现，微观结构、电学和磁学性质，以及正确相的形成，对生长参数非常敏感。这种优化产生了高电阻 BiMnO3 薄膜，从而实现了室温介电测量：我们获得了 5x10(7) Omega cm 的电阻率和 1400 的有效（即与厚度相关）介电常数。这些发现为磁电测量和进一步优化铺平了道路。 (c) 2005 年美国物理研究所。
BiMnO3 (010) films (100 nm) were grown epitaxially on SrTiO3 (001) and 0.2 at. % Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. The microstructure, electrical, and magnetic properties, and indeed the formation of the correct phase, were found to be very sensitive to growth parameters. This optimization has resulted in highly resistive BiMnO3 films and thus enabled room-temperature dielectric measurements: We obtained a resistivity of 5x10(7) Omega cm, and an effective (i.e. thickness dependent) dielectric constant of 1400. These findings pave the way for magnetoelectric measurements and further optimization. (c) 2005 American Institute of Physics.