Dislocation density reduction in GaN using porous SiN interlayers
Dislocation density reduction in GaN using porous SiN interlayers
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DOI：
10.1002/pssa.200461486
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发表时间：
2005-04
期刊：
影响因子：
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通讯作者：
A. Sagar;R. Feenstra;C. K. Inoki;T. Kuan;Y. Fu;Y. Moon;F. Yun;H. Morkoç
中科院分区：
文献类型：
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作者：
A. Sagar;R. Feenstra;C. K. Inoki;T. Kuan;Y. Fu;Y. Moon;F. Yun;H. Morkoç
研究了多孔薄层SiNx对金属有机化学气相沉积（MOCVD）生长GaN的影响。通过在氨存在的情况下将硅烷引入MOCVD腔室，将中间层沉积在GaN模板上，并将GaN覆盖层沉积在中间层上。SiNx间层导致了上覆层的非均匀形核和侧向生长，导致位错向面壁弯曲，并阻碍了部分位错进入上覆层。在SiNx中间层上生长的GaN覆盖层的位错密度降低到7 × 108 cm-2，比没有中间层生长的对照样品的位错密度小一个数量级。（©2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
The influence of a thin porous SiNx interlayer on the growth of GaN by metalorganic chemical vapor deposition (MOCVD) has been studied. The interlayer is deposited on a GaN template by introducing silane in the presence of ammonia into the MOCVD chamber, and a GaN overlayer is deposited on the interlayer. The SiNx interlayer produces inhomogeneous nucleation and lateral growth of the overlayer, causing bending of dislocations towards facet walls, and it also blocks some dislocations from entering the overlayer. The dislocation density for a GaN overlayer grown on a SiNx interlayer was reduced to 7 × 108 cm–2, which is an order of magnitude less than that for a control sample grown without an interlayer. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)