In situ deposition of Sn-doped CdS thin films by chemical bath deposition and their characterization
In situ deposition of Sn-doped CdS thin films by chemical bath deposition and their characterization
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DOI：
10.1088/0022-3727/39/22/006
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发表时间：
2006-11-21
影响因子：
3.4
通讯作者：
Srivastava, Suneel Kumar
中科院分区：
文献类型：
--
作者：
Roy, Poulomi;Srivastava, Suneel Kumar
以酒石酸为络合剂，采用化学浴沉积法成功地原位沉积了Sn掺杂的CdS薄膜。薄膜的结构测定，其特征在于通过X射线衍射，和微结构参数，如微晶尺寸，均方根应变和位错密度已使用X射线线轮廓分析计算。薄膜的组成已被确定通过X射线光电子能谱和能量色散X射线分析。光学研究表明，纯CdS（2.39 eV）的带隙显着降低到3.8摩尔%的Sn掺杂的CdS（1.84 eV）。详细的PL研究CdS掺杂时，不同的Sn浓度也进行了讨论。Sn掺杂CdS薄膜的电阻率的温度变化证实了它们的半导体行为类似于纯CdS。它还表明，在CdS中掺杂Sn使得室温电阻率值从纯CdS的10（10）-10（3）Ω cm分别显著下降到掺杂Sn的CdS的3.8mol%。
In-situ Sn-doped CdS thin films have been deposited successfully by the chemical bath deposition method using tartaric acid as a complexing agent. The films have been characterized by x-ray diffraction for structure determination, and microstructural parameters like crystallite size, rms strain and dislocation density have been calculated using x-ray line profile analysis. The composition of the films has been determined by x-ray photoelectron spectroscopy and energy dispersive x-ray analysis. Optical studies show that the band gap decreases significantly for pure CdS (2.39 eV) to 3.8 mol% of Sn-doped CdS (1.84 eV). A detailed PL study of CdS when doped with varying Sn concentrations has also been discussed. Temperature variation of the electrical resistivity of Sn-doped CdS thin films confirmed their semiconducting behaviour similar to the pure CdS. It also shows that doping of Sn in CdS makes a pronounced drop in the room temperature resistivity value from 10(10) - 10(3) Omega cm for pure CdS to 3.8 mol% of Sn- doped CdS, respectively.