Excitation properties of v=2/3 bilayerquantum Hall phases investigated bymagnetotransport methods
Excitation properties of v=2/3 bilayerquantum Hall phases investigated bymagnetotransport methods
复制标题
磁输运方法研究v=2/3双层量子霍尔相的激发特性
DOI：
10.1103/physrevb.83.235330
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
M. H. Nguyen
中科院分区：
文献类型：
--
作者：
Y. D. Zheng;A. Sawada;Z. F. Ezawa;T. Morikawa;A. Fukuda;D. Terasawa;S. Tsuda;M. H. Nguyen
本文报道了用GaAsAlGaAs双量子阱样品进行磁输运测量，在ν2/3双层量子霍尔（QH）相中发现了新的激发特性.我们将在单一相中具有不同特定激发性质的区域称为相内区域（pi区域）。在倾斜磁场作用下，同一相的π区在高低磁场区激发态的差异导致热激活能Δ的不同行为。当Δ较小时，在平衡点和单层区之间出现一个新的π区。基于复合费米子图像，提出了一个简单的理论模型来解释这些π区的特性。通过精确对角化计算验证了理论模型的有效性。
We report on novel excitation properties in the ν2/3 bilayer quantum Hall (QH) phases by carrying out magnetotransport measurements using a GaAsAlGaAs double-quantum-well sample. We refer to the areas with different particular excitation properties in a single phase as phase internal areas (pi-areas). The differences of the excited states between the pi-areas in the high- and low-magnetic-field region of the same phase lead to different behavior of thermal activation energy Δ under a tilted magnetic field. A new pi-area appears between the balanced point and the single-layer region when Δis small. A simple theoretical model based on the composite-fermion picture is advanced for bilayer fractional QH systems to interpret the characteristics of these pi-areas. Finite-size exact-diagonalization calculations are also executed to verify the validity of the theoretical model.