Dynamic properties of diamond high voltage p-i-n diodes

Dynamic properties of diamond high voltage p-i-n diodes
复制标题

DOI:
10.7567/jjap.56.04cr14
复制
发表时间:
2017-04-01
影响因子:
1.5
通讯作者:
Yamasaki, Satoshi
Yamasaki, Satoshi
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Traore, Aboulaye;Nakajima, Akira;Yamasaki, Satoshi

文献摘要

被引文献

相似文献

研究了金刚石 p(+)-i-n(+) 二极管的开关特性,以突出反向恢复现象,这是基极电导率调制的结果。金刚石 p(+)-i-n(+) 二极管内的电传输仍不清楚,基础电导率调制的有效性仍然是主要问题。测得的金刚石 p(+)-i-n(+) 二极管的关断波形显示出反向恢复,从而证实了其双极性质。金刚石 p(+)-i-n(+) 二极管表现出软恢复和非常快的开关行为(恢复时间小于 200 ns)。此外,根据开关条件,菱形p(+)-i-n(+)二极管的反向恢复可能会引起关断故障,这归因于众所周知的动态雪崩击穿。 (C) 2017 日本应用物理学会
The switching characteristics of a diamond p(+)-i-n(+) diode have been investigated to highlight the reverse recovery phenomenon, which is a consequence of the base conductivity modulation. The electrical transport within a diamond p(+)-i-n(+) diode is still unclear, and the effectiveness of the base conductivity modulation remains the main concern. The measured turn-off waveforms of the diamond p(+)-i-n(+) diode showed reverse recovery, thus confirming its bipolar nature. The diamond p(+)-i-n(+) diode exhibits soft recovery and very fast switching behaviors (the recovery time was less than 200 ns). Moreover, according to the switching conditions, the reverse recovery in the diamond p(+)-i-n(+) diode may induce a turn-off failure, which is ascribed to the well-known dynamic avalanche breakdown. (C) 2017 The Japan Society of Applied Physics