Dynamic properties of diamond high voltage p-i-n diodes
Dynamic properties of diamond high voltage p-i-n diodes
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DOI:
10.7567/jjap.56.04cr14
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发表时间:
2017-04-01
影响因子:
1.5
通讯作者:
Yamasaki, Satoshi
中科院分区:
文献类型:
--
作者:
Traore, Aboulaye;Nakajima, Akira;Yamasaki, Satoshi
The switching characteristics of a diamond p(+)-i-n(+) diode have been investigated to highlight the reverse recovery phenomenon, which is a consequence of the base conductivity modulation. The electrical transport within a diamond p(+)-i-n(+) diode is still unclear, and the effectiveness of the base conductivity modulation remains the main concern. The measured turn-off waveforms of the diamond p(+)-i-n(+) diode showed reverse recovery, thus confirming its bipolar nature. The diamond p(+)-i-n(+) diode exhibits soft recovery and very fast switching behaviors (the recovery time was less than 200 ns). Moreover, according to the switching conditions, the reverse recovery in the diamond p(+)-i-n(+) diode may induce a turn-off failure, which is ascribed to the well-known dynamic avalanche breakdown. (C) 2017 The Japan Society of Applied Physics