Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament
Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament
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使用氮气通过热钨丝对 GaAs 表面进行氮化
DOI：
10.1063/1.115184
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发表时间：
1995
影响因子：
4
通讯作者：
N. Kobayashi
中科院分区：
文献类型：
--
作者：
T. Makimoto;N. Kobayashi
这封信报道了GaAs表面的氮化，使用N2通过热钨丝。氮化后，用分子束外延生长GaAs帽层，形成GaAs/GaN/GaAs结构。对于这些结构，我们通过二次离子质谱分析来确定片氮原子浓度。薄层氮原子浓度与N2压强的平方根成正比，表明N2分子分解成氮原子吸附在GaAs表面。该分解过程的活化能为3.6± 0.4eV。
This letter reports the nitridation of GaAs surfaces using N2 through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2 pressure, indicating that N2 molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.