Gate stack technology for nanoscale devices

Gate stack technology for nanoscale devices
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DOI：
10.1109/nmdc.2006.4388841
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发表时间：
2006-06
期刊：
2006 IEEE Nanotechnology Materials and Devices Conference
影响因子：
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通讯作者：
B. Lee;P. Kirsch;Seung–Hoon Song;R. Choi;R. Jammy
B. Lee;P. Kirsch;Seung–Hoon Song;R. Choi;R. Jammy
中科院分区：
其他
文献类型：
--
作者：
B. Lee;P. Kirsch;Seung–Hoon Song;R. Choi;R. Jammy

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本文回顾了硅器件栅极堆栈技术的历史演变，并对纳米级CMOS器件和非硅基器件的栅极堆栈技术面临的挑战提供了见解。
The historical evolution of gate stack technology for silicon devices is reviewed to provide insight on the challenges in this technology for scaled nanoscale CMOS devices and non-Si-based devices.