Low temperature mechanical properties of boron-doped silicon.

Low temperature mechanical properties of boron-doped silicon.
复制标题

硼掺杂硅的低温机械性能。

DOI:
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发表时间:
1992
影响因子:
8.6
通讯作者:
J. Parpia
J. Parpia
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
R. E. Mihailovich;J. Parpia

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被引文献

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测量了掺硼单晶硅振荡器的音频机械性能随温度的变化。机械性能(Q-1和周期)主要由硼杂质决定,不能归因于玻璃缺陷。我们还发现这些晶体的高应变力学响应在0.3K以下是非线性的。这种非线性的强度与硼浓度有关
The audio-frequency mechanical properties of oscillators fabricated from boron-doped single-crystal silicon were measured as a function of temperature. The mechanical properties (Q -1 and period) are dominated by the boron impurities and cannot be attributed to glassy defects. We also found the higher strain mechanical response of these crystals to be nonlinear below 0.3 K. The strength of this nonlinearity is related to the boron concentration