A New Nucleation-Site-Control Excimer-Laser-Crystallization Method
A New Nucleation-Site-Control Excimer-Laser-Crystallization Method
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一种新的成核位点控制准分子激光结晶方法
DOI：
10.1143/jjap.40.3049
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
M. Matsumura
中科院分区：
文献类型：
--
作者：
M. Nakata;Kouki Inoue;M. Matsumura
提出了一种用于准分子激光结晶的新成核位点控制方法，其中将交叉耦合移相器放置在样品表面上。熔融硅的高导热性使其温度分布在激光照射后不久变得平坦，从而将低温硅区域限制在非常狭窄的区域内。由于成核只能发生在未熔化的硅的这个狭窄区域中，因此不仅核的数量被限制为一个，而且核的位置也可以被确定。从理论上和实验上研究了所提出方法的有效性。在所需位置形成了直径长达 5 µm 的单个颗粒。
A new nucleation-site-control method has been proposed for excimer-laser crystallization, where a cross-coupled phase shifter is placed on the sample surface. High thermal conductivity of molten Si flattens its temperature distribution shortly after laser-light irradiation, and, in turn, confines a low-temperature Si region to a very narrow area. Since nucleation can take place only in this narrow area of unmolten Si, not only is the number of nuclei limited to unity, but also the position of a nucleus can be determined. The usefulness of the proposed method is investigated theoretically and experimentally. A single grain as long as 5 µm in diameter was formed at the desired position.