High silicon etch rates by hot filament generated atomic hydrogen
High silicon etch rates by hot filament generated atomic hydrogen
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通过热灯丝产生原子氢实现高硅蚀刻速率
DOI：
10.1088/0022-3727/30/8/002
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
M. Schubert
中科院分区：
文献类型：
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作者：
H. Wanka;M. Schubert
研究了热钨丝产生的原子氢对氢化非晶硅（a-Si:H）和微晶硅的腐蚀。非晶硅的室温腐蚀速率为27a，微晶硅的室温腐蚀速率为20a。硼的掺杂降低了腐蚀速率，而磷的掺杂对腐蚀速率没有影响。即使对于最高的a-Si:H腐蚀速率，也不会发生表面粗糙化。然而，在蚀刻过程的初始阶段，在靠近表面的地方出现键结构修饰。微晶硅向衬底/薄膜界面的腐蚀速率增加反映了微晶核的聚并。热丝原子氢蚀刻提供了非晶和多晶硅的高蚀刻率，对金属和热氧化物具有高选择性。由于其简单的设置和控制，这种氢蚀刻是非常有趣的应用在半导体技术中，F-或cl -蚀刻剂是避免。
The etching of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon by hot tungsten filament generated atomic hydrogen has been investigated. Room-temperature etch rates of 27 A for amorphous and 20 A for microcrystalline silicon have been achieved. Boron doping decreases the etch rate, whereas phosphorus doping does not affect it. No surface roughening occurs, even for the highest a-Si:H etch rates. In the initial phase of the etch process, however, a bond structure modification arises close to the surface. An increase of microcrystalline silicon etch rates towards the substrate/film interface reflects the coalescence of the microcrystalline nuclei. Hot filament atomic hydrogen etching provides high etch rates of amorphous and polycrystalline silicon with a high selectivity against metals and thermal oxide. Due to its simple setup and control, this kind of hydrogen etching is very interesting for applications in semiconductor technology where F- or Cl-etchants are to be avoided.