Time-dependent electron tunneling through time-dependent tunnel barriers
Time-dependent electron tunneling through time-dependent tunnel barriers
复制标题
随时间变化的电子隧道穿过随时间变化的隧道势垒
DOI:
10.1063/1.1783592
复制
发表时间:
2004
影响因子:
3.2
通讯作者:
G. Haddad
中科院分区:
文献类型:
--
作者:
Z. Gribnikov;G. Haddad
A plane electron wave incident on a tunnel-transparent potential barrier formed by the potential V(x,t)=V0(x)+V1(x)cosωt generates, in addition to the usual stationary transmitted and reflected stationary waves, also “transmitted” and “reflected” electron waves oscillating with the same frequency ω. The transmitted oscillating wave can serve as the basis for transit-time microwave generators oscillating in the terahertz range. (Such oscillators are ballistic analogs of the tunnel-emission transit-time diode oscillators suggested almost half a century ago.) In the special case of a rectangular potential barrier, we describe the dependence of a small transmitted oscillating wave amplitude on the frequency ω and the value of V1(x). We consider two forms of V1(x): (1) homogeneous oscillation of the height of the rectangular barrier and (2) V1(x)=aδ(x−x1) [where δ(x) is the Dirac delta function and 0<x1<w; w is the barrier thickness]. For sufficiently high frequencies ω determined by the time for tunneling, a ...