Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon
Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon
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DOI：
10.1002/aelm.201900820
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发表时间：
2019-11-28
影响因子：
6.2
通讯作者：
Ross, Caroline A.
中科院分区：
文献类型：
--
作者：
Bauer, Jackson J.;Rosenberg, Ethan R.;Ross, Caroline A.
磁性绝缘体，如稀土铁石榴石，是一种很有前途的节能自旋电子存储器和逻辑器件材料，它们的各向异性、磁化和其他特性可以通过选择稀土离子在很大范围内调节。薄膜通常在石榴石衬底上生长为外延单晶，但这些材料与传统电子器件的集成需要在Si上生长。报道了具有垂直磁各向异性（PMA）的镝铁石榴石（DyIG）多晶薄膜在Si衬底和石榴石衬底单晶薄膜上的生长、磁性和自旋输运性质。PMA来源于磁弹性各向异性，通过与衬底的晶格失配或热膨胀失配来控制薄膜的应变状态。DyIG/Si具有大晶粒尺寸和块状磁化和补偿温度。偏振中子反射显示在衬底附近有一个小的界面非磁性区域。在Pt/DyIG/Si异质结构上进行的自旋霍尔磁阻测量表明，Pt和DyIG之间的界面自旋混合电导与其他石榴石/Pt异质结构相当。
Magnetic insulators, such as the rare-earth iron garnets, are promising materials for energy-efficient spintronic memory and logic devices, and their anisotropy, magnetization, and other properties can be tuned over a wide range through selection of the rare-earth ion. Films are typically grown as epitaxial single crystals on garnet substrates, but integration of these materials with conventional electronic devices requires growth on Si. The growth, magnetic, and spin transport properties of polycrystalline films of dysprosium iron garnet (DyIG) with perpendicular magnetic anisotropy (PMA) on Si substrates and as single crystal films on garnet substrates are reported. PMA originates from magnetoelastic anisotropy and is obtained by controlling the strain state of the film through lattice mismatch or thermal expansion mismatch with the substrates. DyIG/Si exhibits large grain sizes and bulk-like magnetization and compensation temperature. Polarized neutron reflectometry demonstrates a small interfacial nonmagnetic region near the substrate. Spin Hall magnetoresistance measurements conducted on a Pt/DyIG/Si heterostructure demonstrate a large interfacial spin mixing conductance between the Pt and DyIG comparable to other garnet/Pt heterostructures.