Development of hard masks for reactive ion beam angled etching of diamond
Development of hard masks for reactive ion beam angled etching of diamond
复制标题
DOI：
10.1364/oe.452826
复制
发表时间：
2022-04-25
期刊：
影响因子：
3.8
通讯作者：
Loncar, Marko
中科院分区：
文献类型：
--
作者：
Chia, Cleaven;Machielse, Bartholomeus;Loncar, Marko
金刚石具有良好的光学性质，并具有明亮的色心和长的自旋相干时间。金刚石倾斜蚀刻的最新进展，特别是反应离子束倾斜蚀刻（RIBAE），已经成功地证明了在可见光波长下工作的量子光子器件。然而，由于需要较长蚀刻时间的器件尺寸增大而引起的掩模腐蚀增大，在电信波长下操作的较大器件难以制造。我们评估了用于金刚石光子晶体纳米梁和波导的RIBAE的不同掩模材料，以及它们的厚度、选择性、纵横比和侧壁平滑度如何影响所得的蚀刻轮廓和光学性能。我们发现，在薄的氧化铝粘附层上的厚的氢倍半硅氧烷（HSQ）层提供了最佳的蚀刻轮廓和光学性能。在这项工作中探索的技术也可以适用于其他大块材料，是不可用的异质外延或作为绝缘体上的薄膜。(C)2022 Optica出版集团根据Optica开放获取出版协议的条款
Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times. We evaluated different mask materials for RIBAE of diamond photonic crystal nanobeams and waveguides, and how their thickness, selectivity, aspect ratio and sidewall smoothness affected the resultant etch profiles and optical performance. We found that a thick hydrogen silesquioxane (HSQ) layer on a thin alumina adhesion layer provided the best etch profile and optical performance. The techniques explored in this work can also be adapted to other bulk materials that are not available heteroepitaxially or as thin films-on-insulator. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement