Fabrication of CuSiC metal matrix composites
Fabrication of CuSiC metal matrix composites
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DOI：
10.1007/s10853-005-2622-3
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发表时间：
2006-01
影响因子：
4.5
通讯作者：
G. Sundberg;P. Paul;C. Sung;T. Vasilos
中科院分区：
文献类型：
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作者：
G. Sundberg;P. Paul;C. Sung;T. Vasilos
CuSiC MMC散热器将提供250至325 W/mK之间的高导热系数和相应的可调热膨胀系数在8.0至12.5 ppm/°C之间。CuSiC制造的主要挑战是防止铜和碳化硅在高温致密化过程中发生反应，从而显著降低导热性。在本研究中，解决的关键问题是在CuSiC制造所需的温度（850至1200°C）下Si对Cu的攻击。SiC与铜接触时的分解会使Si溶解在Cu中，导致Cu的导热系数急剧下降。这种Si向Cu的扩散可以通过应用可靠的屏障层来阻止，以减少通过扩散路径的质量传递，从而最小化化学相互作用。确定了一种可靠的阻挡涂层，并将其用于CuSiC复合材料的制备。采用SEM、TEM、XRD和XPS对CuSiC复合材料进行了表征。化学分析和激光扩散系数测量表明了屏障的有效性。成功制备了导热系数为322.9 W/m-K的CuSiC复合材料。
A CuSiC MMC heatspreader will offer high thermal conductivity between 250 and 325 W/mK and corresponding adjustable thermal expansion coefficient between 8.0 and 12.5 ppm/°C. The primary challenge of CuSiC manufacture was to prevent reaction between copper and silicon carbide during high temperature densification, which dramatically degraded the thermal conductivity. In this study, the key issue addressed was the Si attack of Cu at the temperatures necessary for CuSiC fabrication (850 to 1200°C). Decomposition of SiC in contact with copper will dissolve Si in Cu causing a dramatic decrease of Cu thermal conductivity. This diffusion of Si into Cu can be prevented by the application of reliable barrier layers to diminish mass transport through the diffusion path and thereby minimizing the chemical interaction. A reliable barrier coating was identified and used to fabricate the CuSiC composites. The CuSiC composites were then characterized by SEM, TEM, XRD and XPS. Chemical analysis and thermal conductivity by laser flash diffusivity measurement illustrated the effectiveness of the barriers. A CuSiC composite having thermal conductivity of 322.9 W/m-K was successfully fabricated.