Systematic study of thermal stability of AlGaN/GaN two-dimensional electron gas structure with SiN surface passivation
Systematic study of thermal stability of AlGaN/GaN two-dimensional electron gas structure with SiN surface passivation
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SiN表面钝化AlGaN/GaN二维电子气结构热稳定性的系统研究
DOI：
10.1587/elex.1.160
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
N. Shigekawa
中科院分区：
文献类型：
--
作者：
K. Shiojima;S. Sugitani;N. Shigekawa
对具有或不具有 SiN 表面钝化膜的 HEMT 的 AlGaN/GaN 2DEG 结构进行了退火研究，并考虑了 AlGaN 层厚度依赖性。如果没有 SiN，具有薄 AlGaN 层的样品的薄层电阻在 620 和 800°C 退火后显着增加。相比之下，即使 AlGaN 层薄至 152A，SiN 样品在高达 800°C 的退火温度后仍具有热稳定性。 TEM 观察表明，SiN/AlGaN 界面处的表面粗糙度和界面扩散均未因退火而发生。 SiN 层对于钝化 AlGaN 表面和提高薄 AlGaN 2DEG 沟道的热稳定性非常有效。
An annealing study of the AlGaN/GaN 2DEG structure for HEMTs with or without SiN surface passivation films was conducted with the AlGaN layer thickness dependence taken into consideration. Without SiN, the sheet resistance of the samples with thin AlGaN layers increased significantly upon annealing at 620 and 800°C. In contrast, samples with SiN were thermally stable after annealing at up to 800°C even when the AlGaN layer was as thin as 152A. TEM observations revealed that neither surface roughness nor interfacial diffusion at the SiN/AlGaN interface occurred due to annealing. The SiN layer is very effective for passivating an AlGaN surface and improving the thermal stability of a thin-AlGaN 2DEG channel.