Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method
Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method
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DOI：
10.1088/1742-6596/518/1/012002
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发表时间：
2014-06
期刊：
影响因子：
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通讯作者：
D. Ichida;G. Uchida;H. Seo;K. Kamataki;N. Itagaki;K. Koga;M. Shiratani
中科院分区：
文献类型：
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作者：
D. Ichida;G. Uchida;H. Seo;K. Kamataki;N. Itagaki;K. Koga;M. Shiratani
本文报道了在高压条件下，用射频磁控溅射方法在Ar和H混合气体中沉积晶态Ge纳米颗粒薄膜。根据拉曼光谱的峰值频移，推测Ge纳米粒子的尺寸为6.3-6.4 nm。拉曼光谱和X射线衍射谱表明薄膜为晶态。薄膜的结晶度强烈依赖于衬底温度(Ts)。在ts=180°C的条件下，成功制备了高晶态的Ge纳米颗粒薄膜。
We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts = 180°C.