Defect Imaging and Structure Evolution in GST Films During In-situ Heating
Defect Imaging and Structure Evolution in GST Films During In-situ Heating
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DOI：
10.1017/s1431927620017961
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发表时间：
2020-07
影响因子：
2.8
通讯作者：
C. Ghosh;M. Singh;J. Watt;H. Silva;C. B. Carter
中科院分区：
文献类型：
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作者：
C. Ghosh;M. Singh;J. Watt;H. Silva;C. B. Carter
结合了联合收割机Ge、Sb和Te的相变材料（称为GST材料）是未来非易失性数据存储应用的主要竞争者之一，这是由于它们在晶体结构和非晶结构的光电特性方面的差异[1]。相变电子存储器装置利用通过施加电脉冲在相位之间的快速且重复的切换。利用这两个相位的性质差异来生成“0”和“1”数据系列[2]。光刻和SET操作使形成器件的有源区的纳米级体积的相变材料非晶化和结晶化。在器件应用中的退火操作期间，强烈的电脉冲熔化结晶相，然后结晶相被快速淬火，得到非晶相。在SET操作中，通过施加更长且强度更小的电脉冲将非晶相转变为晶相，所述电脉冲提供热能以使材料再结晶。期间
Phase-change materials that combine Ge, Sb and Te (known as GST materials) are one of the major contenders for future non-volatile data storage applications due to their difference in opto-electrical properties for the crystalline structure and the amorphous structure [1]. Phase-change electronic memory devices make use of the rapid and repeated switching between the phases through the application of electrical pulses. The difference in properties of these two phases are utilized to generate the “0” and “1” data series [2]. RESET and SET operations amorphize and crystallize a nanoscale volume of phase-change material that forms the active region of the device. During the RESET operation in the device application, an intense electrical pulse melts the crystalline phase which is then rapidly quenched giving an amorphous phase. In the SET operation, the amorphous phase is transformed into the crystalline phase with the application of a longer and less intense electrical pulse which provides the thermal energy to recrystallize the material. During