THERMAL-PROPERTIES OF HIGH-QUALITY SINGLE-CRYSTALS OF BISMUTH TELLURIDE .1. EXPERIMENTAL CHARACTERIZATION
THERMAL-PROPERTIES OF HIGH-QUALITY SINGLE-CRYSTALS OF BISMUTH TELLURIDE .1. EXPERIMENTAL CHARACTERIZATION
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DOI：
10.1016/0022-3697(88)90182-5
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发表时间：
1988-01-01
影响因子：
4
通讯作者：
SCHERRER, S
中科院分区：
文献类型：
--
作者：
FLEURIAL, JP;GAILLIARD, L;SCHERRER, S
本文对n型和p型碲化铋样品进行了热电特性研究，并与化学计量偏差作了关系。采用退火饱和技术，在560°C和熔点585.5°C之间的温度下，从单晶锭制备高纯样品。借助电导率和热导率的测量以及室温下的塞贝克系数，确定了品质因数Z的最大值。形式：Z= 2.9 10−3K−1。对于P型：Z= 2.3 10−3K− 1这些Z值对应于比纯Bi2Te3样品的Z值增加了近50%。
A thermoelectric characterization of samples of bismuth telluride of bothn- andp-type is carried out, as a function of stoichiometric deviation. Highly pure samples were prepared from single crystalline ingots, using an annealing saturation technique at temperatures between 560°C and the melting point 585.5°C. With the help of measurements of electrical and thermal conductivities, and Seebeck coefficients at room temperature, a sharp maximum in the figure of merit Z was determined. Forn-type:Z= 2.9 10−3K−1. ForP-type:Z= 2.3 10−3K−1These values ofZcorrespond to an increase of nearly 50% from the usual values ofZfor pure Bi2Te3samples.