PREPARATION OF BI-BASED FERROELECTRIC THIN-FILMS BY SOL-GEL METHOD
PREPARATION OF BI-BASED FERROELECTRIC THIN-FILMS BY SOL-GEL METHOD
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DOI：
10.1143/jjap.34.5096
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发表时间：
1995-09-01
期刊：
影响因子：
--
通讯作者：
OGI, K
中科院分区：
文献类型：
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作者：
ATSUKI, T;SOYAMA, N;OGI, K
Bi/Ta和Sr/Ta摩尔比对SrxBiyTa2O2铁电性能的影响[SBIT(x/y/2.0); [0.7≤x≤1.0、2.0≤y≤2.6]的薄膜电容器进行了研究。 SBIT薄膜是通过溶胶-凝胶法在Pt/Ta/SiO2/Si和Pt/Ti/SiO2/Si衬底上旋涂生长的。薄膜在氧气气氛中在800摄氏度下退火一小时。剩余极化率 (Pr) 强烈依赖于 Sr/Ta 摩尔比，并随着 Sr/Ta 摩尔比的降低而增加。另一方面，Pr 几乎与 Bi/Ta 摩尔比无关。扫描电子显微镜（SEM）图像显示，随着Sr/Ta摩尔比的降低，晶粒长大。电子探针微量分析仪 (EPMA) 分析表明，SPIT 薄膜中的 Bi 含量随着化学计量中 Sr 成分的减少而增加。
The effects of Bi/Ta and Sr/Ta mole ratios on ferroelectric properties of SrxBiyTa2O2 [SBIT(x/y/2.0); 0.7 less than or equal to x less than or equal to 1.0, 2.0 less than or equal to y less than or equal to 2.6] thin-film capacitors were investigated. The SBIT films were grown by the sol-gel method using a spin-on coating on Pt/Ta/SiO2/Si and Pt/Ti/SiO2/Si substrates. The films were annealed at 800 degrees C for one hour in oxygen atmosphere. Remanent polarization (Pr) depended strongly on the Sr/Ta mole ratio, and increased with decrease of the Sr/Ta mole ratio. On the other hand, Pr was almost independent of the Bi/Ta mole ratio. Scanning electron microscopy (SEM) images show that crystal grains grew with decrease of the Sr/Ta mole ratio. Electron probe micro analyzer (EPMA) analysis revealed that Bi content in SPIT films increased with decrease in Sr composition from stoichiometry.