Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy
Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy
复制标题
选区金属有机气相外延中 InGaAs 纳米线阵列直径和节距的控制
DOI:
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发表时间:
2012
期刊:
影响因子:
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通讯作者:
Y. Kohashi
中科院分区:
文献类型:
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作者:
T. Wada;Y. Kohashi;S. Hara and J. Motohisa;Y. Kohashi