Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors
Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors
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DOI：
10.1103/physrevlett.112.136403
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发表时间：
2014-04-02
影响因子：
8.6
通讯作者：
Oshiyama, Atsushi
中科院分区：
文献类型：
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作者：
Matsushita, Yu-ichiro;Oshiyama, Atsushi
我们发现共价半导体导带底部的电子态主要分布在间隙通道中，这种浮置性质导致了各种多型SiC的带隙变化和各向异性有效质量。我们发现，沟道的长度，而不是在过去盛行的六边形，是带隙变化的多型体的决定性因素。我们还发现，浮动性质导致二维电子和空穴系统在不同的SiC多型体的界面处，甚至在倾斜的SiC表面附近的一维通道。
We find that electron states at the bottom of the conduction bands of covalent semiconductors are distributed mainly in the interstitial channels and that this floating nature leads to the band-gap variation and the anisotropic effective masses in various polytypes of SiC. We find that the channel length, rather than the hexagonality prevailed in the past, is the decisive factor for the band-gap variation in the polytypes. We also find that the floating nature causes two-dimensional electron and hole systems at the interface of different SiC polytypes and even one-dimensional channels near the inclined SiC surface.