Solving the graphene electronics conundrum: High mobility and high on-off ratio in graphene nanopatterned transistors
Solving the graphene electronics conundrum: High mobility and high on-off ratio in graphene nanopatterned transistors
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DOI：
10.1016/j.physe.2017.12.011
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发表时间：
2018-03-01
影响因子：
3.3
通讯作者：
Dragoman, Daniela
中科院分区：
文献类型：
--
作者：
Dragoman, Mircea;Dinescu, Adrian;Dragoman, Daniela
在晶片规模上制作了数十个具有纳米孔道和不同沟道长度的石墨烯晶体管。纳米孔具有20 nm的中心直径和100 nm的周期，沟道的长度为1、2、4或8微米。我们已经发现，在这2微米宽的晶体管中，迁移率从对于1微米的沟道长度的大约10400 cm(2)/vs到对于8微米的沟道长度的大约550 cm(2)/vs变化。不管迁移率的值如何，在所有晶体管中，在漏极和栅极电压小于2V时，通断比至少为10(3)。与沟道长度相关的迁移率和电导值表明电荷载流子开始强烈局域化，而高通断比是由于纳米孔打开带隙所致。
Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a period of 100 nm, the lengths of the channel being of 1, 2, 4 or 8 mu m. We have found that the mobility in these 2 mu m-wide transistors varies from about 10400 cm(2)/Vs for a channel length of 1 mu m to about 550 cm(2)/Vs for a channel length of 8 mu m. Irrespective of the mobility value, in all transistors the on-off ratio is at least 10(3) at drain and gate voltages less than 2 V. The channel length-dependent mobility and conductance values indicate the onset of strong localization of charge carriers, whereas the high on-off ratio is due to bandgap opening by nanoperforations.