Effect of n- and p-type doping concentrations and compensation on the electrical properties of semiconducting diamond
Effect of n- and p-type doping concentrations and compensation on the electrical properties of semiconducting diamond
复制标题
n型和p型掺杂浓度及补偿对半导体金刚石电性能的影响
DOI：
10.1002/pssa.201600407
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and J. Pernot
中科院分区：
文献类型：
--
作者：
A. Traore;S. Koizumi;and J. Pernot
我们对掺入硼和磷杂质的单晶金刚石外延层的电学性质进行了详尽的描述。在300和500 K两种不同的温度下，计算了掺硼和掺磷金刚石的载流子密度、载流子迁移率和电阻率作为掺杂水平和补偿值在10到10之间的函数。计算值与文献中的实验数据进行了图形比较，并从器件性能的角度进行了讨论。最后，通过将第一pn金刚石结的IV特性与我们的计算结果进行比较，给出了图形的应用实例。在300K和500 K下，空穴迁移率随受主浓度和补偿量的变化进行了理论计算。这些符号是参考文献中的实验数据。
We report an exhaustive description of electrical properties of mono‐crystalline diamond epilayers doped with boron and phosphorus impurities. Carrier density, carrier mobility, and resistivity have been calculated for boron and phosphorus doped diamond as a function doping level and a compensation for values ranging between 10 and 10 at two different temperatures of 300 and 500 K. The calculated values are graphically compared with experimental data from the literature and discussed in terms of device performances. Finally, an example of use of the graphics is given by comparing the IV characteristics of the first pn diamond junction with our calculations.Theoretical hole mobility as function of acceptor concentration and compensation at 300 and 500 K. The symbols are experimental data from references given in the text.