Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth
Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth
复制标题
通过同质外延横向生长在 N 掺杂金刚石 (1 1 1) 中选择性埋入无台阶表面的重 B 掺杂金刚石层
DOI：
10.1016/j.apsusc.2022.153340
复制
发表时间：
2022
影响因子：
6.7
通讯作者：
Tokuda Norio
中科院分区：
文献类型：
--
作者：
Kobayashi Kazuki;Zhang Xufang;Makino Toshiharu;Matsumoto Tsubasa;Inokuma Takao;Yamasaki Satoshi;Nebel Christoph E.;Tokuda Norio
在本工作中，我们提出了一种新的方法来形成掩埋重掺硼（B）的p+-结构与台阶的金刚石表面的氮掺杂金刚石（1 1 1）的基础上同质外延横向生长技术。通过电感耦合等离子体（ICP）刻蚀梅萨结构和随后的重B掺杂，在微波等离子体辅助化学气相沉积（MPCVD）中以15，000 ppm的硼碳（B/C）比制造尺寸为10 µ m × 10 µm × 0.085 µm的掩埋结构。用激光显微镜（LM）和原子力显微镜（AFM）观察了埋区及其周围的表面形貌，发现在B掺杂前后，埋区及其周围的表面都是原子级平整的。使用开尔文探针力显微镜（KFM）的表面电位差测量这两个领域。利用动态二次离子质谱（西姆斯）测量了埋区及其周围B浓度的强度成像，证实了埋区结构的重B掺杂，深度剖面显示B掺杂均匀，浓度为2 × 1020 atoms/cm 3。
In this work, we proposed a novel method to form a buried heavily boron (B) doped p+-structure with a step-free diamond surface in nitrogen doped diamond (1 1 1) based on homoepitaxial lateral growth technique. The buried structure with a size of 10 µm × 10 µm × 0.085 µm was fabricated by inductively coupled plasma (ICP) etching of the mesa structure and subsequent heavy B-doping, with a boron to carbon (B/C) ratio of 15,000 ppm in the microwave-plasma-assisted chemical vapor deposition (MPCVD). The surface morphology of the buried area and its surrounding were observed by laser microscopy (LM) and atomic force microscopy (AFM), which showed atomically flat surfaces before and even after B doping. Surface potential difference measurements on both areas were applied using Kelvin-probe force microscopy (KFM). The intensity imaging of B concentration in and around the buried areas were measured by dynamic secondary ion mass spectrometry (SIMS), which confirmed the heavy B doping of the buried structure and the depth profile shows that B doping is uniform, with a concentration of 2 × 1020atoms/cm3.