Atomistic Field Theory for contact electrification of dielectrics
Atomistic Field Theory for contact electrification of dielectrics
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DOI：
10.1016/j.elstat.2018.09.001
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发表时间：
2018-12-01
影响因子：
1.8
通讯作者：
Leseman, Zayd C.
中科院分区：
文献类型：
--
作者：
Abdelaziz, Khalid M.;Chen, James;Leseman, Zayd C.
导电材料的摩擦带电可以用不同费米能级之间的电子转移来解释。然而，人们对电介质中的摩擦带电知之甚少。表面偶极子的形成是由接触引起的表面晶格变形引起的。基于原子场理论(AFT)的公式被用来计算极化场、电场和势场的分布。将感应场视为电荷转移的驱动力。模拟结果表明，一种MgO/BaTiO_3摩擦材料可以产生高达104V/cm(2)的电流，这与已有文献中的数据是一致的。
The triboelectrification of conducting materials can be explained by electron transfer between different Fermi levels. However, triboelectrification in dielectrics is poorly understood. The surface dipole formations are shown to be caused by the contact-induced surface lattice deformations. An Atomistic Field Theory (AFT) based formulation is utilized to calculate the distribution of the polarization, electric and potential fields. The induced fields are considered as the driving force for charge transfer. The simulation results show that a MgO/BaTiO3 tribopair can generate up to 104 V/cm(2), which is comprable with the data in the published literature.