Feasible Route for a Large Area Few-Layer MoS₂ with Magnetron Sputtering.
Feasible Route for a Large Area Few-Layer MoS₂ with Magnetron Sputtering.
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磁控溅射大面积少层MoS2的可行路线
DOI：
10.3390/nano8080590
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发表时间：
2018-08-03
期刊：
影响因子：
--
通讯作者：
Kwok HS
中科院分区：
文献类型：
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作者：
Zhong W;Deng S;Wang K;Li G;Li G;Chen R;Kwok HS
本文报道了用射频磁控溅射结合硫化法在SiO2/Si衬底上连续大面积生长二硫化钼。采用两步法合成了MoS 2薄膜。在第一步中，通过射频（RF）磁控溅射在400 °C下以不同的溅射功率沉积薄的MoS 2膜。随后，对溅射态的MoS 2薄膜在600 °C下进行60 min的硫化处理。通过控制射频磁控溅射功率，溅射结合硫化是制备大面积少层MoS 2的可行途径。一个相对简单的增长策略，同时提高薄膜质量的物理和化学。利用拉曼光谱、X射线衍射仪、高分辨场发射透射电子显微镜和X射线光电子能谱测量建立了MoS 2的少层结构。光谱和显微镜的结果表明，这些MoS 2层是低无序和良好的结晶。此外，通过控制射频磁控溅射功率，可以在大面积上实现高质量的少层MoS 2。
In this article, we report continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS2 film was synthesized using a two-step method. In the first step, a thin MoS2 film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS2 film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS2 by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS2 are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS2 layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS2 on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.