Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy
Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy
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DOI：
10.1007/s11664-003-0179-y
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发表时间：
2003-05-01
影响因子：
2.1
通讯作者：
Porter, LM
中科院分区：
文献类型：
--
作者：
Chang, KC;Bentley, J;Porter, LM
利用能量过滤透射电镜（EFTEM）研究了热氧化生成的6H-SiC/SiO2界面对氧化条件的影响。C和Si的元素图被用来计算C- Si在界面上的浓度分布。在潮湿的环境中，在1100度氧化4小时的样品中，在不同的区域观察到C/Si浓度增加（高达35%）。从一些随机选取的区域得到的数据表明，在950℃下再氧化3 h显著减少，但没有消除过量的界面碳。
Energy-filtered transmission electron microscopy (EFTEM) was used to study 6H-SiC/SiO2 interfaces produced by thermal oxidation as a function of the oxidation conditions. Elemental maps of C and Si were used to calculate C-to-Si concentration profiles across the interfaces. Enhanced C/Si concentrations (up to similar to 35%) were observed at distinct regions in samples oxidized at 1100degreesC for 4 h in a wet ambient. The data from a number of randomly selected regions indicate that re-oxidation at 950degreesC for 3 h significantly reduced, but did not eliminate, the amount of excess interfacial carbon.