Probing local electronic states in the quantum Hall regime with a side-coupled quantum dot
Probing local electronic states in the quantum Hall regime with a side-coupled quantum dot
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DOI：
10.1103/physrevb.81.245302
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发表时间：
2009-12
影响因子：
3.7
通讯作者：
T. Otsuka;E. Abe;Y. Iye;S. Katsumoto
中科院分区：
文献类型：
--
作者：
T. Otsuka;E. Abe;Y. Iye;S. Katsumoto
我们展示了一种新的方法，用于局部探测的边缘状态，在量子霍尔制度利用侧耦合量子点定位在霍尔条的边缘。通过测量电子从边缘态进入点的隧道，我们获得了边缘态的局部电化学势和电子温度的信息。此外，这种方法使我们能够观察到由于多体屏蔽效应在边缘状态的静电势的空间调制。
We demonstrate a new method for locally probing the edge states in the quantum Hall regime utilizing a side coupled quantum dot positioned at an edge of a Hall bar. By measuring the tunneling of electrons from the edge states into the dot, we acquire information on the local electrochemical potential and electron temperature of the edge states. Furthermore, this method allows us to observe the spatial modulation of the electrostatic potential at the edge state due to many-body screening effect.