Strengths and advantages of electrodeposition as a semiconductor growth technique for applications in macroelectronic devices
Strengths and advantages of electrodeposition as a semiconductor growth technique for applications in macroelectronic devices
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DOI：
10.1149/1.2128120
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发表时间：
2006-01-01
影响因子：
3.9
通讯作者：
Haigh, J
中科院分区：
文献类型：
--
作者：
Dharmadasa, IM;Haigh, J
本文综述了电沉积作为一种低成本的大面积半导体生长技术在太阳能电池板和大面积显示器件等微电子器件中的应用。为了突出其优势，本文介绍了从x射线衍射和光致发光中获得的实验证据。研究表明，当材料在合适的条件下生长时，电沉积能够生产出用于电子器件应用的高质量材料。本文还总结了电沉积电子材料和太阳能电池器件研究中产生的新科学和新的太阳能电池设计。新设计已经用经过充分研究的III-V材料，GaAs和AlxGa((1-x))As进行了测试，器件性能在器件参数（V-oc近似于1110 mV， FF近似于0.83）方面得到了显着改善。这些新设计也使用电沉积的CuInGaSe2材料进行了测试，并取得了令人鼓舞的初步结果，这些结果也被提出和讨论。(c) 2005电化学学会。
This paper reviews the strengths and advantages of electrodeposition as a low-cost and large-area semiconductor growth technique for applications in macroelectronic devices such as solar panels and large-area display devices. To highlight its strengths, experimental evidence obtained from X-ray diffracton and photoluminescence is presented. It has been shown that when materials are grown with the right conditions, electrodeposition is capable of producing high-quality materials for electronic device applications. The paper also summarizes the new science and new solar cell designs emanating from the research on electrodeposited electronic materials and solar cell devices. The new designs have been tested with well-researched III-V materials, GaAs and AlxGa((1-x))As, and the device performances show a drastic improvement in device parameters (V-oc approximate to 1110 mV and FF approximate to 0.83). These new designs have also been tested using electrodeposited CuInGaSe2 materials, with encouraging preliminary results which are also presented and discussed. (c) 2005 The Electrochemical Society.