An analysis of temperature distribution near the melt–crystal interface in silicon Czochralski growth with a transverse magnetic field
An analysis of temperature distribution near the melt–crystal interface in silicon Czochralski growth with a transverse magnetic field
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DOI：
10.1016/j.jcrysgro.2005.05.002
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发表时间：
2005-08
影响因子：
1.8
通讯作者：
Lijun Liu;S. Nakano;K. Kakimoto
中科院分区：
文献类型：
--
作者：
Lijun Liu;S. Nakano;K. Kakimoto
