0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser
0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser
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850 nm 二极管泵浦表面发射半导体激光器的 0.5 W 单横模操作
DOI：
10.1109/lpt.2003.813446
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发表时间：
2003
影响因子：
2.6
通讯作者：
M. Dawson
中科院分区：
文献类型：
--
作者：
J. Hastie;J. Hopkins;S. Calvez;C. W. Jeon;D. Burns;R. Abram;Erling Riis;Allister I. Ferguson;M. Dawson
报道了一种半导体泵浦的850 nm垂直外腔表面发射激光器的功率调节，该激光器采用内腔式碳化硅散热器与半导体表面光学接触。据我们所知，这是第一次使用液体毛细管技术将碳化硅键合到III-V半导体结构上。在抽运功率只有0.6 nm/W的情况下，在圆对称的TEM/Sub00/输出光束中获得了~GT；0.5W的高输出功率。在可用的最高泵浦功率之前，没有明显的热翻转现象，这意味着使用这种方法会有更大的输出功率扩展潜力。
We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.