Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy
Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy
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利用 X 射线光电子能谱分析硫钝化 InGaP 表面的钝化机理
DOI：
10.1063/1.373057
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发表时间：
2000
影响因子：
3.2
通讯作者：
Ching
中科院分区：
文献类型：
--
作者：
Chang;Ching
用X射线光电子能谱研究了(100)InGaP(100)InGaP表面经(NH4)2Sx处理后的钝化机理和化学组成。采用合适的(NH4)2Sx处理工艺可以进一步去除刻蚀InGaP表面的本征氧化物。X射线光电子能谱表明，在(NH_4)_2S_x处理的InGaP表面，S原子除了与单质硫结合外，还与In、Ga原子成键。而S原子占据了磷相关的空位，而不是与P原子成键。提出了硫钝化表面的结构模型。
We present the passivation mechanism and the chemistry of an (NH4)2Sx treated (100) InGaP surface using x-ray photoelectron spectroscopy. The native oxide on the as-etched InGaP surface could be further removed by a suitable (NH4)2Sx-treatment process. The measured x-ray photoelectron spectra revealed that the S atoms, in addition to bonding to the elemental sulfur, also bonded with the In and Ga atoms on the (NH4)2Sx-treated InGaP surface. However, the S atoms occupied the phosphorous-related vacancies instead of bonding with the P atoms. A proposed structural model of a sulfur-passivated surface is then presented.