Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga-Al binary solution
Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga-Al binary solution
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使用 Ga-Al 二元溶液通过 LPE 方法在氮化蓝宝石上同质外延生长 AlN
DOI：
10.1002/pssa.201001014
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
H. Fukuyama
中科院分区：
文献类型：
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作者：
M. Adachi;K .Maeda;A. Tanaka;H. Kobatake;H. Fukuyama
提出了一种在常压下使用 Ga-Al 二元熔剂生长 AlN 层的新型液相外延方法。在该方法中，将氮气注入助熔剂中。然后以氮化蓝宝石衬底为模板实现同质外延生长。证明了使用氮化蓝宝石衬底的优点；研究了最佳助焊剂成分。我们在 1573 K 下生长了 1 µm 厚的 c 轴取向 AlN 层 5 h。AlN (0002) 和 (10−12) 的 X 射线摇摆曲线的半高全宽分别为 50 和 590 arcsec。此外，利用扫描电子显微镜、激光显微镜和高分辨率透射电子显微镜观察了表面形貌和界面结构。
A novel liquid phase epitaxy method was proposed for growing an AlN layer using Ga–Al binary flux under normal pressure. In this method, nitrogen gas was injected into the flux. Then a nitrided sapphire substrate was used as a template to achieve homoepitaxial growth. Advantages of using a nitrided sapphire substrate were demonstrated; the optimum flux composition was investigated. We grew 1‐µm‐thickc‐axis oriented AlN layer for 5 h at 1573 K. The full width at half maximum values of X‐ray rocking curves for AlN (0002) and (10−12) were, respectively, 50 and 590 arcsec. Moreover, the surface morphology and interfacial structure were observed using a scanning electron microscope, laser microscope, and high‐resolution transmission electron microscope.