Flat bands near Fermi level of topological line defects on graphite
Flat bands near Fermi level of topological line defects on graphite
复制标题
石墨拓扑线缺陷费米能级附近的平带
DOI：
10.1063/1.4752441
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发表时间：
2012-09-10
影响因子：
4
通讯作者：
He, Lin
中科院分区：
文献类型：
--
作者：
Feng, Lei;Lin, Xianqing;He, Lin
在这里，我们报道了在石墨的一维拓扑缺陷中存在接近费米能级的平带的直接实验证据。平坦的能带表现为一个明显的态隧穿密度峰值。我们的从头计算表明，费米速度为零的平带来源于缺陷边缘欠配位碳原子的sp2悬挂键(具有反键性质)。我们进一步证明，平坦能带的存在可能是缺陷边缘碳原子配位不足的石墨烯/石墨一维缺陷的必然行为。
Here, we report direct experimental evidence for the presence of flat bands, close to the Fermi level, in one-dimensional topological defects of graphite. The flat bands are manifested by a pronounced peak in the tunnelling density of states. Our ab initio calculations indicate that the flat bands with vanishing Fermi velocity originate from sp2 dangling bonds (with antibonding nature) of undercoordinated carbon atoms at the edges of the defects. We further demonstrate that the presence of flat bands could be an inevitable behavior of 1D defects of graphene/graphite with undercoordinated carbon atoms at the edges of the defects.