A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator
A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator
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DOI：
10.1063/1.5134856
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发表时间：
2020-01-27
影响因子：
4
通讯作者：
Tabrizian, R.
中科院分区：
文献类型：
--
作者：
Ghatge, M.;Walters, G.;Tabrizian, R.
本文报道了一种基于原子工程铁电氧化铪锆（Hf0.5Zr0.5O2）薄膜的30 nm厚集成纳米机电谐振器。通过覆盖10 nm厚的氮化钛（TiN）层和快速热退火，原子构建了10 nm厚的Hf0.5Zr0.5O2层，促进了具有强铁电性能的正交晶相。然后对所得金属-铁电-金属（MFM）膜进行图像化，以创建集成的纳米机电谐振器，其总厚度为30 nm，平面与垂直纵横比超过10(4):1。利用铁电f0.5 zr0.5 o2中较大的电伸缩效应，30 nm厚的纳米机械谐振器在195 kHz下被激发成弯曲共振，振动幅值非常大，接近100 nm。利用TiN电极的双端口apoapozation提取纳米机电谐振器的传输响应，在大气和10(-7)Torr环境压力下分别显示质量因子(Q)为15和3300。最后，利用微探针的点力对MFM纳米膜进行了类似于24 μ m的偏转，探索了MFM纳米膜的结构坚固性，突出了小厚度和超高宽高比下的延伸弹性。基于hf0.5 zr0.5 o2的纳米膜谐振器具有原子级厚度、完全集成操作、高Q值和结构稳健性，有望实现芯片级经典和量子信息处理和传感应用的高度集成换能器。
This paper reports a 30 nm-thick integrated nano-electro-mechanical resonator based on atomically engineered ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2) film. A 10 nm-thick Hf0.5Zr0.5O2 layer is atomically engineered through capping with 10 nm-thick titanium nitride (TiN) layer and rapid thermal annealing to promote the orthorhombic crystal phase with strong ferroelectric properties. The resulting metal-ferroelectric-metal (MFM) membrane is then patterned to create an integrated nano-electro-mechanical resonator with an overall thickness of 30 nm and a planar-to-vertical aspect ratio exceeding 10(4):1. Benefiting from large electrostrictive effects in ferroelectric Hf0.5Zr0.5O2, the 30 nm-thick nanomechanical resonator is excited into flexural resonance at 195 kHz with a very large vibration amplitude of similar to 100 nm. The transmission response of the nano-electro-mechanical resonator is extracted, using a two-port apodization of the TiN electrodes, showing quality factors (Q) of 15 and 3300 at atmospheric and 10(-7 )Torr ambient pressures, respectively. Finally, the structural robustness of the MFM nano-membrane is explored through the application of a similar to 24 mu m deflection, using a point-force by a micro-probe, highlighting the extended elasticity despite the small thickness and ultra-high aspect ratio. The atomic-level thickness, fully integrated operation, high Q, and structural robustness of the Hf0.5Zr0.5O2-based nano-membrane resonator promise its potential for the realization of highly integrated transducers for chip-scale classical and quantum information processing and sensing applications.