Photoluminescence microscopy of carbon nanotubes grown by chemical vapor deposition: influence of external dielectric screening on optical transition energies
Photoluminescence microscopy of carbon nanotubes grown by chemical vapor deposition: influence of external dielectric screening on optical transition energies
复制标题
化学气相沉积生长的碳纳米管的光致发光显微镜：外部介电屏蔽对光学跃迁能量的影响
DOI：
10.1103/physrevb.75.075421
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
M. Kappes
中科院分区：
文献类型：
--
作者：
O. Kiowski;S. Lebedkin;M. Kappes
应用光致发光（PL）激光显微镜来确定单个半导体单壁碳纳米管（SWNTs）的光学跃迁能E-11和E-22悬浮在碳纳米管“森林”的顶部，通过化学气相沉积（CVD）生长在硅衬底上。一个统一的增加E-11和E-22能量分别为40-55和24-48毫电子伏，被发现为19个不同的（n，m）纳米管物种悬浮在空气中或真空-相对于单壁碳纳米管在参考水-表面活性剂分散体。CVD生长的单壁碳纳米管嵌入在石蜡油和1-甲基萘显示出几乎相同的PL峰位置的单壁碳纳米管在水分散体，表明类似的电介质屏蔽激子在这些介质中的单壁碳纳米管。
Photoluminescence (PL) laser microscopy was applied to determine optical transition energies E-11 and E-22 of individual semiconducting single-walled carbon nanotubes (SWNTs) suspended on top of carbon nanotube "forests," grown by chemical vapor deposition (CVD) on silicon substrates. A uniform increase of E-11 and E-22 energies by 40-55 and 24-48 meV, respectively, was found for 19 different (n,m) nanotube species suspended in air or a vacuum-relative to SWNTs in a reference water-surfactant dispersion. CVD-grown SWNTs embedded in paraffin oil and 1-methylnaphthalene show nearly the same PL peak positions as SWNTs in aqueous dispersion, indicating similar dielectric screening of excitons in SWNTs in these media.