Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System
Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System
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DOI：
10.1143/jjap.49.085501
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发表时间：
2010-08
影响因子：
1.5
通讯作者：
B. Lai;Ching-Ting Lee;Jhen-Dong Hong;S. Yao;Day-Shan Liu
中科院分区：
文献类型：
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作者：
B. Lai;Ching-Ting Lee;Jhen-Dong Hong;S. Yao;Day-Shan Liu
采用射频磁控溅射系统制备氧化锌基肖特基二极管，通过提高ZnO晶体的溅射质量，优化接触欧姆电阻，补偿肖特基接触面状态，提高了ZnO基肖特基二极管的整流性能。通过后退火处理，获得了具有高c轴取向和低内部残余应力的未掺杂ZnO层。在未掺杂的ZnO层上沉积了均匀的n型ZnO -铟锡氧化物（ITO）溅射膜，以优化其与Al电极的欧姆接触行为。采用氧等离子体处理方法钝化了未掺杂ZnO层与Ni/Au电极的肖特基接触面。由于补偿了ZnO表面的天然氧空位（VO），泄漏电流明显减小，从而获得了理想系数为1.23、肖特基势垒高度为0.82 eV的高质量肖特基二极管。
The rectifying property of a zinc oxide (ZnO)-based Schottky diode prepared using a radio-frequency (rf) magnetron cosputtering system was improved by enhancing the cosputtered ZnO crystal quality, thereby optimizing the ohmic contact resistance and compensating the Schottky contact surface states. An undoped ZnO layer with a high c-axis orientation and a low internal residual stress was achieved using a postannealing treatment. A homogeneous n-type ZnO–indium tin oxide (ITO) cosputtered film was deposited onto the undoped ZnO layer to optimize the ohmic contact behavior to the Al electrode. The Schottky contact surface of the undoped ZnO layer to the Ni/Au electrode was passivated using an oxygen plasma treatment. Owing to the compensation of the native oxygen vacancies (VO) on the undoped ZnO surface, the leakage current markedly decreased and subsequently led to a quality Schottky diode performance with an ideality factor of 1.23 and a Schottky barrier height of 0.82 eV.