Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1-xAs multiple quantum wells and the Gamma(8v)-Gamma(6c) gap of GaAs
Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1-xAs multiple quantum wells and the Gamma(8v)-Gamma(6c) gap of GaAs
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DOI：
10.1063/1.366098
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发表时间：
1997-09-01
影响因子：
3.2
通讯作者：
Oelgart, G
中科院分区：
文献类型：
--
作者：
Passler, R;Oelgart, G
我们对G. Oelgart等人[J.Appl.Phys.74，2742（1993）]中对高质量分子束外延生长GaAs/Al 0.3Ga 0.7As多量子阱结构中基态重空穴和轻空穴激子的研究。适当的拟合所测得的激子峰位置的温度依赖性从4.2到340 K显示提供了一种新的分析四参数表示最近开发的作者之一的半导体中的差距收缩效应。极限（T-->无穷大）收缩系数的大小，α =0.475 meV/K，和相关的平均声子温度，θ =222.4 K，已被确定。通过与从低温到高温的各种实验观测结果的比较，讨论并数值说明了早期三参数模型的特征定性差异和基本缺陷。(C)1997年美国物理学会。
We have performed a detailed numerical reinvestigation of the photoluminescence peak position data given by G. Oelgart et al. [J. Appl. Phys. 74, 2742 (1993)] for the ground state heavy-and light-hole excitons in a high quality molecular beam epitaxially grown GaAs/Al0.3Ga0.7As multiple quantum well structure. Appropriate fittings of the measured temperature dependencies of exciton peak positions from 4.2 up to 340 K are shown to be provided by a novel analytical four-parameter representation developed recently by one of the authors for the gap shrinkage effect in semiconductors. The magnitude of the limiting (T-->infinity) Shrinkage coefficient, alpha=0.475 meV/K, and the associated average phonon temperature, Theta=222.4 K, have been determined. Characteristic qualitative differences and basic deficiencies of earlier three-parameter models are discussed and illustrated numerically by comparisons with various experimental observations from low to high temperatures. (C) 1997 American Institute of Physics.