Photoreflectance study of hole‐subband structures in GaAs/InxAl1−xAs strained‐layer superlattices
Photoreflectance study of hole‐subband structures in GaAs/InxAl1−xAs strained‐layer superlattices
复制标题
GaAs/InxAl1−xAs应变层超晶格中空穴子带结构的光反射研究
DOI：
10.1063/1.351579
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发表时间：
1992
影响因子：
3.2
通讯作者：
H. Nishimura
中科院分区：
文献类型：
--
作者：
M. Nakayama;T. Doguchi;H. Nishimura
我们对生长在（001）GaAs衬底上的（dG，dI，x）=（100，100，0），（100，100，0.1），（100，100，0.2）和（40，40，0.2）的GaAs（dG A）/InxAl 1 −xAs（dI A）应变层超晶格中与第一（n=1）子带相关的激子跃迁进行了光反射测量。反映振子强度的n=1激子的光反射强度分布清楚地表明，n=1 <$J=3/2，mJ=±3/2≥（重空穴）子带和n=1 <$3/2，±1/2≥（轻空穴）子带的顺序因In浓度（晶格失配应变）和层厚度（量子尺寸效应）而改变。在考虑应变效应的有效质量近似的基础上，分析了空穴子带阶数随In浓度和层厚变化的实验结果。
We have performed photoreflectance measurements of the exciton transitions associated with the first (n=1) subbands in GaAs(dG A)/InxAl1−xAs(dI A) strained‐layer superlattices with (dG, dI, x)=(100,100,0), (100,100,0.1), (100,100,0.2), and (40,40,0.2) grown on (001) GaAs substrates. The photoreflectance‐intensity profiles of the n=1 excitons, which reflect the oscillator strength, clearly demonstrate that the order of the n=1 ‖J=3/2, mJ=±3/2≥ (heavy‐hole) subband and the n=1 ‖3/2,±1/2≥ (light‐hole) subband is changed by the In concentration (lattice‐mismatch strain) and the layer thickness (quantum‐size effect). We have analyzed the experimental results of the hole‐subband order as a function of the In concentration and the layer thickness on the basis of an effective‐mass approximation taking into account strain effects.