GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric -: art. no. 063501
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric -: art. no. 063501
复制标题
DOI：
10.1063/1.1861122
复制
发表时间：
2005-02-07
影响因子：
4
通讯作者：
Hwang, JCM
中科院分区：
文献类型：
--
作者：
Ye, PD;Yang, B;Hwang, JCM
本文报道了一种采用原子层沉积（ALD）Al 2 O3作为栅介质的GaN金属氧化物半导体高电子迁移率晶体管（MOS-HEMT）。与类似设计的常规GaN高电子迁移率晶体管（HEMT）相比，MOS-HEMT表现出几个数量级的低栅极漏电流和几倍的高击穿电压和沟道电流。这意味着ALD Al_2O_3/AlGaN界面是高质量的，并且ALD Al_2O_3/AlGaN/GaN MOS-HEMT对于高功率RF应用是高潜力的。此外，高质量ALD Al 2 O3栅极电介质允许在高横向场下测量AlGaN/GaN异质结处的有效二维（2D）电子迁移率。所得的有效2D电子迁移率比Si、GaAs或InGaAs金属氧化物半导体场效应晶体管（MOSFET）的典型电子迁移率高得多。(C)2005年美国物理学会。
We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a conventional GaN high-electron-mobility-transistor (HEMT) of similar design, the MOS-HEMT exhibits several orders of magnitude lower gate leakage and several times higher breakdown voltage and channel current. This implies that the ALD Al2O3/AlGaN interface is of high quality and the ALD Al2O3/AlGaN/GaN MOS-HEMT is of high potential for high-power rf applications. In addition, the high-quality ALD Al2O3 gate dielectric allows the effective two-dimensional (2D) electron mobility at the AlGaN/GaN heterojunction to be measured under a high transverse field. The resulting effective 2D electron mobility is much higher than that typical of Si, GaAs or InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs). (C) 2005 American Institute of Physics.