Generation of Ince–Gaussian beams in highly efficient, nanosecond Cr, Nd:YAG microchip lasers
Generation of Ince–Gaussian beams in highly efficient, nanosecond Cr, Nd:YAG microchip lasers
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DOI：
10.1088/1612-2011/10/8/085803
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发表时间：
2013-06
影响因子：
1.7
通讯作者：
J. Dong;J. Ma;Y. Ren;G. Xu;A. Kaminskii
中科院分区：
文献类型：
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作者：
J. Dong;J. Ma;Y. Ren;G. Xu;A. Kaminskii
利用激光二极管端面泵浦的自调Q微片激光器，实现了高效率、高重复频率的高次激光输出。当吸收泵浦功率为8.2W时，平均输出功率超过2W，相应的光-光转换效率达到25%。在激光二极管泵浦的CrNdYAG微芯片激光器中，采用倾斜的大面积泵浦光束，在不同的泵浦功率水平下，获得了纳秒脉冲宽度和峰值功率大于2kW的各种IG模。研究了不同泵浦功率下，由倾斜泵浦光束引起的反转布居分布和Cr4+离子对Cr4+离子的非线性吸收对CrNdYAG微芯片激光器高阶IG模振荡的影响。高阶IG模振荡对CrNdYAG微芯片激光器的性能有很大影响。
Direct generation of higher-order Ince–Gaussian (IG) beams from laser-diode end-pumped Cr, Nd:YAG self-Q-switched microchip lasers was achieved with high efficiency and high repetition rate. An average output power of over 2 W was obtained at an absorbed pump power of 8.2 W; a corresponding optical-to-optical efficiency of 25% was achieved. Various IG modes with nanosecond pulse width and peak power of over 2 kW were obtained in laser-diode pumped Cr, Nd:YAG microchip lasers under different pump power levels by applying a tilted, large area pump beam. The effect of the inversion population distribution induced by the tilted pump beam and nonlinear absorption of Cr4+-ions for different pump power levels on the oscillation of higher-order IG modes in Cr, Nd:YAG microchip lasers is addressed. The higher-order IG mode oscillation has a great influence on the laser performance of Cr, Nd:YAG microchip lasers.