Structural properties and frequency response of AlN thin film surface acoustic wave device
Structural properties and frequency response of AlN thin film surface acoustic wave device
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AlN薄膜声表面波器件的结构特性及频率响应
DOI：
10.1109/korus.2001.975101
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
Kyu
中科院分区：
文献类型：
--
作者：
C. Nam;Kyu
采用反应磁控溅射法在[100]硅片和蓝宝石（R面）上制备了用于SAW滤波器的AlN薄膜。介绍了AlN薄膜的结构和电学特性。通过XRD观察到在各种操作条件下高度取向的[002]面。AFM测量表明，沉积的薄膜具有光滑的表面。横截面SEM显微照片显示出排列良好的柱状结构。叉指换能器（IDT）/AlN/Si结构在中心频率126 MHz处的声表面波速度约为5040 m/s。插入损耗被测量为22 dB的相对低值。中心频率为297 MHz时，IDT/AlN/Sapphire结构的声表面波传播速度为5960 m/s，插入损耗约为48 dB。
An AlN thin film for SAW filter applications was deposited on [100] silicon wafers and sapphire (R-plane) by the reactive magnetron sputtering method. Structural and electrical characteristics of the AlN thin film are presented. The highly oriented [002] plane at various operating conditions was observed by XRD. AFM measurement showed that deposited thin film had a smooth surface. The cross-sectional SEM micrograph showed a well-aligned columnar structure. SAW velocity of the interdigital transducer (IDT)/AlN/Si structure was about 5040 m/s in the center frequency of 126 MHz. Insertion loss was measured to be a relatively low value of 22 dB. SAW velocity of IDT/AlN/sapphire structure was 5960 m/s in the center frequency of 297 MHz, and insertion loss was about 48 dB.