17.3% efficient black silicon solar cell without dielectric antireflection coating
17.3% efficient black silicon solar cell without dielectric antireflection coating
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DOI：
10.1016/j.solener.2014.10.029
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发表时间：
2014-12
期刊：
影响因子：
6.7
通讯作者：
Zeng-Wang Zhao;Ping Li;Yi Wei;Chunxi Lu;X. Tan;Aimin Liu
中科院分区：
文献类型：
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作者：
Zeng-Wang Zhao;Ping Li;Yi Wei;Chunxi Lu;X. Tan;Aimin Liu
利用扩散发射极形成后的四甲基氢氧化铵(TMAH)刻蚀技术，获得了17.3%的无增透膜黑硅太阳电池。采用纳米银辅助刻蚀的方法在金字塔结构的硅片上制备了大面积(156×156 mm~2)b-Si晶片。TMAH腐蚀对硅表面纳米结构的修饰抑制了发射极表面和附近的表面复合和俄歇复合，使b-Si太阳电池的有效少子寿命从10.7%μS提高到20.8%μS，虽然b-Si太阳电池的平均反射率从2.38%略有提高到2.71%，但与提高载流子复合寿命的有利影响相比，这是一个小的损失。结果表明，通过TMAH刻蚀处理，提高了b-Si太阳电池在短波区的内量子效率，这是限制b-Si太阳电池效率的主要因素。
17.3% efficient black silicon (b-Si) solar cell without antireflection coating was achieved via tetramethylammonium hydroxide (TMAH) etching after the formation of the diffusion emitter. Large area (156 × 156 mm2) b-Si wafers were prepared by silver-nanoparticle-assisted etching on pyramid-structured silicon wafers. The modification of nanostructures of silicon surface by TMAH etching suppresses the surface recombination and Auger recombination at and near the emitter surface, and the effective minority carrier lifetime of the b-Si solar cells was improved from 10.7 μs to 20.8 μs. Although the average reflectance of the b-Si solar cell slightly increases from 2.38% to 2.71% via the process of TMAH etching, it is a small loss compared with the beneficial impact of the improvement of the carrier recombination lifetime. As a result, the internal quantum efficiency at short wavelength region was improved through the TMAH etch treatment, which was a main limiting factor for the efficiency of b-Si solar cells.