231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
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DOI：
10.1063/1.2770662
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发表时间：
2007-08-13
影响因子：
4
通讯作者：
Kamata, Norihiko
中科院分区：
文献类型：
--
作者：
Hirayama, Hideki;Yatabe, Tohru;Kamata, Norihiko
作者展示了波长在231-261 nm范围内的AlGaN多量子阱（MQW）深紫外发光二极管（LED），其制造在通过氨（NH3）脉冲流多层生长技术形成的低穿透位错密度AlN缓冲层上。作者获得了波长为231 nm的AlGaN-MQW LED的单峰操作，这是蓝宝石上AlGaN基LED的最短波长。261和231 nm的LED的最大输出功率和外量子效率分别为1.65 mW和0.23%，在室温（RT）连续波（CW）操作下，约5 μ W和0.001%，在RT脉冲操作下，分别。(C)2007年，美国物理学会。
The authors demonstrated AlGaN multiquantum-well (MQW) deep-ultraviolet light-emitting diodes (LEDs) with wavelengths in the range of 231-261 nm, fabricated on low threading dislocation density AlN buffers formed through an ammonia (NH3) pulse-flow multilayer growth technique. The authors obtained a single-peaked operation of the AlGaN-MQW LED with a wavelength of 231 nm, which is the shortest wavelength of AlGaN-based LED on sapphire. The maximum output power and external quantum efficiency of the 261 and 231 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) continuous-wave (cw) operation, and approximately 5 mu W and 0.001% under RT pulsed operation, respectively. (C) 2007 American Institute of Physics.