Molecular layer deposition of an Al-based hybrid resist for electron-beam and EUV lithography
Molecular layer deposition of an Al-based hybrid resist for electron-beam and EUV lithography
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DOI：
10.1117/12.2657636
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发表时间：
2023-05
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影响因子：
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通讯作者：
A. Ravi;Jingwei Shi;Jacqueline Lewis;S. Bent
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作者：
A. Ravi;Jingwei Shi;Jacqueline Lewis;S. Bent
随着光刻技术在其缩小微电子器件的能力方面的进步，对改进的抗蚀剂材料，特别是用于极紫外（EUV）的抗蚀剂材料的需求变得越来越迫切。在这项工作中，我们研究了分子层沉积（MLD）的铝基混合薄膜抗蚀剂，被称为“alucone”，扩展我们以前的研究，测试铪基混合薄膜“alucnicone”作为EUV抗蚀剂。使用金属前体三甲基铝和有机前体乙二醇在100 ºC下生长硅油。与蓝尼克一样，铝硅酮也是一种负性抗蚀剂，可以分辨50 nm的线宽，尽管初步数据表明铝硅酮的线条图案比蓝尼克的线条图案更清晰。当使用3 M HCl作为显影剂时，阿罗尼酮的灵敏度为400 μC/cm 2，而阿罗酮的灵敏度还没有那么好（使用0.125 M HCl时为4800 μC/cm 2）。我们的研究alucone提供了新的见解MLD膜的结构特征，可以导致所需的EUV响应行为。这一发现可能会加速用于电子束和EUV光刻的气相沉积无机抗蚀剂的发展。
As lithographic techniques advance in their capabilities of shrinking microelectronics devices, the need for improved resist materials, especially for extreme ultraviolet (EUV), has become increasingly pressing. In this work, we study the molecular layer deposition (MLD) of an Al-based hybrid thin film resist, known as “alucone,” extending our previous research that tested the Hf-based hybrid thin film “hafnicone” as an EUV resist. Alucone is grown at 100 ºC using the metal precursor trimethylaluminum and the organic precursor ethylene glycol. Like hafnicone, alucone behaves as a negative tone resist that can resolve 50-nm line widths, though preliminary data suggest that alucone’s line patterns are more sharply defined than those of hafnicone. Whereas hafnicone’s sensitivity is 400 μC/cm2 using 3 M HCl as the developer, alucone’s sensitivity is not yet as good (4800 μC/cm2 using 0.125 M HCl). Our study of alucone offers new insight into structural features of an MLD film that can lead to desired EUV-responsive behavior. This insight may accelerate the development of vapor-deposited inorganic resists for use in electron-beam and EUV lithography.