Grain-boundary structure and microstructure development mechanism in 2-8 mol% yttria-stabilized zirconia polycrystals
Grain-boundary structure and microstructure development mechanism in 2-8 mol% yttria-stabilized zirconia polycrystals
复制标题
DOI：
10.1016/j.actamat.2007.11.026
复制
发表时间：
2008-04-01
期刊：
影响因子：
9.4
通讯作者：
Ikuhara, Y.
中科院分区：
文献类型：
--
作者：
Matsui, K.;Yoshida, H.;Ikuhara, Y.
在1100-1500 ℃的烧结温度范围内，系统地研究了2和3mol%Y2O3稳定的四氧化锆多晶（2 Y-和3 Y-TZP）和8mol%Y2O3稳定的立方氧化锆（8 Y-CSZ）在烧结过程中的显微结构发展。在1200 ℃以上，8 Y-CSZ中的晶粒生长比2 Y-和3 Y-TZP中的晶粒生长快得多。在这些试样中的晶界面，无定形层不存在，但是，Y3+离子在晶界上的一个类似的宽度为10 nm的偏析。在8 Y-CSZ中分离的Y ~（3+）离子的量显著小于2 Y-和3 Y-TZP。这表明偏聚的Y3+离子的增加阻碍了晶粒生长。因此，烧结过程中的晶粒长大行为可以合理地解释为Y 3+离子沿沿着偏聚的溶质拖曳机制。Y3+离子的偏聚直接影响晶粒的生长，与晶界偏聚诱导相变（GBSIPT）的驱动力密切相关。(C)2007 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
Microstructural developments during sintering in 2 and 3 mol% Y2O3-stabilized tetragonal zirconia polycrystals (2Y- and 3Y-TZPs) and 8 mol% Y2O3-stabilized cubic zirconia (8Y-CSZ) were systematically investigated in the sintering temperature range of 1100-1500 degrees C. Above 1200 degrees C, grain growth in 8Y-CSZ was much faster than that in 2Y- and 3Y-TZPs. In the grain-boundary faces in these specimens, amorphous layers did not exist; however, Y3+ ions segregated at the grain boundaries over a width of similar to 10 nm. The amount of segregated Y3+ ions in 8Y-CSZ was significantly less than in 2Y- and 3Y-TZPs. This indicates that an increase in segregated Y3+ ions retards grain growth. Therefore, grain growth behavior during sintering can be reasonably explained by the solute-drag mechanism of Y3+ ions segregating along the grain boundary. The segregation of Y3+ ions, which directly affects grain growth, is closely related to the driving force for grain-boundary segregation-induced phase transformation (GBSIPT). (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.