Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxide VO2
Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxide VO2
复制标题
DOI：
10.1103/physrevb.80.115115
复制
发表时间：
2009-09-01
影响因子：
3.7
通讯作者：
Basov, D. N.
中科院分区：
文献类型：
--
作者：
Frenzel, A.;Qazilbash, M. M.;Basov, D. N.
我们研究了相关材料二氧化钒（VO2）薄膜中的渗透绝缘体到金属的转变（IMT）。采用散射型扫描近场红外显微镜和原子力显微镜研究了绝缘VO2中金属区成核与形貌的关系。我们通过平均曲率和统计分析证明了IMT开始于距晶界和裂纹10 nm的范围内。我们还观察到在单晶颗粒中绝缘和金属畴的共存，这表明由于IMT体系中竞争的电子相，VO2中存在固有的不均匀性。
We investigate the percolative insulator-to-metal transition (IMT) in films of the correlated material vanadium dioxide (VO2). Scattering-type scanning near-field infrared microscopy and atomic force microscopy were used to explore the relationship between the nucleation of metallic regions and the topography in insulating VO2. We demonstrate that the IMT begins within 10 nm from grain boundaries and crevices by using mean curvature and statistical analysis. We also observe coexistence of insulating and metallic domains in a single crystalline grain that points to intrinsic inhomogeneity in VO2 due to competing electronic phases in the IMT regime.